MMDT2227M datasheet(2/4 Pages) DIODES

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DS30718 Rev. 4 - 2

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MMDT2227M

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Electrical Characteristics, 2222A Type (NPN)

@ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 10mA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

6.0

IE = 10mA, IC = 0

Collector Cutoff Current

ICBO

VCB = 60V, IE = 0

VCB = 60V, IE = 0, TA = 150°C

Collector Cutoff Current

ICEX

VCE = 60V, VEB(OFF) = 3.0V

Emitter Cutoff Current

IEBO

VEB = 3.0V, IC = 0

Base Cutoff Current

IBL

VCE = 60V, VEB(OFF) = 3.0V

ON CHARACTERISTICS (Note 4)

DC Current Gain

hFE

100

300

IC = 100mA, VCE = 10V

IC = 1.0mA, VCE = 10V

IC = 10mA, VCE = 10V

IC = 150mA, VCE = 10V

IC = 500mA, VCE = 10V

IC = 10mA, VCE = 10V, TA = -55°C

IC = 150mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

0.3

1.0

IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

Base-Emitter Saturation Voltage

VBE(SAT)

0.6

1.2

2.0

IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

—

VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product

300

MHz

VCE = 20V, IC = 20mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time

VCC = 30V, IC = 150mA,

VBE(off) = - 0.5V, IB1 = 15mA

Rise Time

Storage Time

225

VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA

Fall Time

Note:

4. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.

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