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2N2907 Datasheet(PDF) 1 Page - STMicroelectronics |
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2N2907 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collect or-Base Voltage (IE =0) -60 V VCEO Collect or-Emitt er Voltage (IB =0) -40 V VEBO Emitt er-Base Voltage (IC =0) -5 V IC Collect or Current -0. 6 A Ptot Total Dissipation at Tamb ≤ 25 oC for 2N2905 for 2N2907 at Tcase ≤ 25 oC for 2N2905 for 2N2907 0.6 0.4 3 1.8 W W W W Tstg St orage Temperature -65 t o 200 oC Tj Max. Operating Junction Temperature 200 oC TO-18 TO-39 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. 1/5 |
Similar Part No. - 2N2907 |
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Similar Description - 2N2907 |
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