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M7F Datasheet(PDF) 2 Page - UN Semiconducctor INC |
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M7F Datasheet(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 M7F Surface Mount General Purpose Silicon Rectifier Electrical Characteristics Curves Fig. 2 Typical Instaneous Reverse Characteristics Fig.1 Forward Current Derating Curve Fig. 4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 0.2 0.4 0.6 0.8 1.0 1.2 0 0 25 50 75 100 125 150 175 Case Temperature (°C) Single phase half-wave 60 Hz resistive or inductive load 200 400 600 800 0 0.01 0.1 1.0 10 Instaneous Reverse Voltage (V) 100 T =25 J ° C T =75 J ° C T =100 J ° C T =125 J ° C T =150 J ° C 0.1 0.6 0.8 0.9 1.0 1.1 Instaneous Forward Voltage (V) 0.7 1.0 0.2 0.5 1.0 10 100 0.1 1 10 100 Reverse Voltage (V) T =25 J ° C 05 10 15 20 25 30 0 10 100 Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) 1 35 |
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