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K2000SB Datasheet(PDF) 3 Page - UN Semiconducctor INC

Part # K2000SB
Description  Sidac
PDF  5 Pages
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Manufacturer  UNSEMI [UN Semiconducctor INC]
Direct Link  http://www.unsemi.com.tw
Logo UNSEMI - UN Semiconducctor INC

K2000SB Datasheet(HTML) 3 Page - UN Semiconducctor INC

  K2000SB Datasheet HTML 1Page - UN Semiconducctor INC K2000SB Datasheet HTML 2Page - UN Semiconducctor INC K2000SB Datasheet HTML 3Page - UN Semiconducctor INC K2000SB Datasheet HTML 4Page - UN Semiconducctor INC K2000SB Datasheet HTML 5Page - UN Semiconducctor INC  
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Sidac
Revision March 1,2022
www.unsemi.com.tw
For technical questions, contact: tech@unsemi.com.tw
ROHS
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
KXXXXSB Series
3/4
Electrical Characteristics (@=25℃ unless otherwise Specified)
Figure 1- Normalized Vs change
Vs. junction temperature
Figure 2- Normalized DC holding current
Vs. case temperature
-40 -20
0
20
40
60
80 100 120 140 160
Case Temperature (TC) -
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
25℃
Soldering Parameters
Time
Time to peak temperature
( T25℃ to peak)
Preheat
Ts(min)
Ts(max)
TL
TL
TP
Ramp-up
Ramp-down
Critical Zone
TL toTP
TP
Ts
25
Lead–free assembly
150°C
200°C
60 -180 Seconds
3°C/Second max
3°C/Second max
217°C
60 -150 Seconds
260 +0/-5°C
8-15 Seconds
6°C/Second Max
8 minutes Max
260°C
Reflow Condition
Pre Heat
-Temperature Min (Ts(min))
-Temperature Max (Ts(max))
- Time (min to max) (TS)
Average ramp up rate ( Liquidus
Temp TL) to peak
TS(max) to TL - Ramp-up Rate
Reflow
- Temperature (TL) (Liquidus)
- Time (min to max) (TS)
Peak Temperature (TP)
Do not exceed
Time 25°C to peak Temperature (TP)
Time within 5°C of actual peak
Temperature (TP)
Ramp-down Rate
℃



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