BSP170 datasheet(2/8 Pages) UMW

Part #	BSP170

Description	-60V P-Channel MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	UMW [Guangdong Youtai Semiconductor Co., Ltd.]

Direct Link	https://www.umw-ic.com/

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2 / 8 page

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction -soldering point

R thJS

K/W

SMD version, device on PCB:

R thJA

minimal footprint

110

K/W

6 cm

2 cooling area1)

Electrical characteristics, atTj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250 µA

-60

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-250 µA

-1.1

-2

-3

Zero gate voltage drain current

I DSS

V DS=-60 V, V GS=0 V,

-0.1

-1

µA

j=25 °C

V DS=-60 V, V GS=0 V,

T j=125 °C

-10

-100

Gate-source leakage current

I GSS

V GS=-20 V, V DS=0 V

-10

-100

Drain-source on-state resistance

R DS(on)

V GS=-10 V, I D=-1.9 A

239

300

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-1.9 A

1.3

2.6

Values

www.umw-ic.com

UTD Semiconductor Co.,Limited

UMW

BSP170

-60V P-Channel MOSFET

BSP170 Datasheet(PDF) 2 Page - Guangdong Youtai Semiconductor Co., Ltd.

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