MOSFET ELECTRICAL CHARACTERISTICS

Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted)

Parameter

Symbol Test Condition

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID = -250µA

-20

V

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID = -250µA

-0.4

-1.5

V

Gate-source leakage

IGSS

VDS =0V, VGS = ±8V

±100

nA

Zero gate voltage drain current

IDSS

VDS = -16V, VGS =0V

-1

µA

Drain-source on-state resistancea

RDS(on)

VGS = -4.5V, ID = -2.4A

36

52

mΩ

VGS = -2.5V, ID = -2A

47

70

mΩ

VGS = -1.8V, ID = -1.8A

65

100

mΩ

Forward transconductancea

gfs

VDS = -4.5V, ID = -2.4A

12

S

Diode forward voltage

VSD

IS= -1A,VGS=0V

-0.8

-1.2

V

Dynamic

Input capacitance

Ciss

VDS = -10V,VGS =0V,

f=1MHz

1312

pF

Output capacitance

Coss

240

pF

Reverse transfer capacitanceb

Crss

106

pF

Total gate charge

Qg

VDS = -10V,VGS = -4.5V,

ID = -2.4A

12

nC

Gate-source charge

Qgs

2

nC

Gate-drain charge

Qgd

2

nC

Gate resistance

Rg

f=1MHz

0.5

3.2

Ω

Switchingbtr

Turn-on delay time

td(on)

VDS= -10V

RL=3.5Ω, ID ≈ -1A,

VGEN= -4.5V,Rg=3Ω

15

ns

Rise time

tr

15

ns

Turn-off delay time

td(off)

40

ns

Fall time

tf

25

ns

Drain-source body diode characteristicstr

Continuous Source-Drain Diode Current

IS

Tc=25℃

-1.2

A

Pulsed Diode forward Curren

ISM

-10

A

Note :

1. Repetitive Rating : Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t < 10 sec.

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

2

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