Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250

PA

30

V

'BVDSS

'TJ

Breakdown Voltage Temperature

Coefficient

ID = 250

PA,Referenced to 25qC

26

mV/

qC

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

1

PA

VDS = 24 V, VGS = 0 V, TJ = 55

qC

10

PA

IGSS

Gate–Body Leakage

VGS =

r20 V,

VDS = 0 V

r100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250

PA

1

2.1

3

V

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 1.4 A

VGS = 4.5 V,

ID = 1.2 A

92

120

110

160

m

:

ID(on)

On–State Drain Current

VGS = 4.5 V,

VDS = 5 V

3.5

A

gFS

Forward Transconductance

VDS = 5 V,

ID = 1.4 A

4

S

Dynamic Characteristics

Ciss

Input Capacitance

145

193

pF

Coss

Output Capacitance

35

47

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

15

23

pF

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

1.6

:

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

3

6

ns

tr

Turn–On Rise Time

8

16

ns

td(off)

Turn–Off Delay Time

16

29

ns

tf

Turn–Off Fall Time

VDD = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6

:

2

4

ns

Qg

Total Gate Charge

1.3

1.8

nC

Qgs

Gate–Source Charge

0.5

nC

Qgd

Gate–Drain Charge

VDS = 15 V,

ID = 1.4 A,

VGS = 4.5 V

0.5

nC

Drain–Source Diode Characteristics

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = 0.42 A

(Note 2)

0.8

1.2

V

trr

Diode Reverse Recovery Time

IF = 1.4 A,

diF/dt = 100 A/µs

11

22

nS

Qrr

Diode Reverse Recovery Charge

4

nC

Notes:

1.

RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.

a) 250

qC/W when mounted on a

0.02 in2 pad of 2 oz. copper.

b) 270°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2.

Pulse Test: Pulse Width

d 300 Ps, Duty Cycle d 2.0%

UMW

R

FDN361

www.umw-ic.com

2

UTD Semiconductor Co.,Limited