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NE5209D Datasheet(PDF) 11 Page - NXP Semiconductors |
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NE5209D Datasheet(HTML) 11 Page - NXP Semiconductors |
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11 / 15 page ![]() Philips Semiconductors Product specification NE/SA5209 Wideband variable gain amplifier 1990 Aug 20 11 20 10 1500 100 1.1V 0.8V 0.4V 200mV 100mV 50mV 25mV 10 0 –10 –20 –30 1000 Frequency (MHz) T = 25 °C RS = RL = 50 Ω Rt = 50Ω See Test Setup 1 SR00259 Figure 23. Insertion Gain vs Frequency and VAGC 15 10 100 1500 1000 Frequency (MHz) 10 5 0 –5 5.5V 4.5V T = 25 °C VAGC = 1.1V RS = RL = 50Ω Rt = 50Ω See Test Setup 1 SR00261 Figure 24. Insertion Gain vs Frequency and VCC 16 –100 50 150 100 Temperature ( °C) 14 12 10 8 6 4 2 0 0 –50 T = 25 °C VAGC = 1.1V Rt = 50Ω f = 10MHz See Test Setup 1 VCC = 7.0V VCC = 6.0V VCC = 5.0V VCC = 4.5V SR00260 Figure 25. Insertion Gain vs Temperature and VCC 0 10 100 1500 1000 Frequency (MHz) –5 –10 –15 –20 –25 25 °C -55 °C 125 °C RS = RL = 50Ω Rt = 50Ω See Test Setup 1 SR00262 Figure 26. Output Return Loss vs Frequency |
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