Philips Semiconductors

Product specification

NE5210

Transimpedance amplifier (280MHz)

1995 Apr 26

2

DC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

Min

Typ

Max

UNIT

Input bias voltage

0.6

0.8

0.95

V

Output bias voltage

2.8

3.3

3.7

V

Output offset voltage

0

80

mV

Supply current

21

26

32

mA

3

4

mA

Input current (2% linearity)

Test Circuit 8, Procedure 2

±120

±160

µA

Maximum input current

overload threshold

Test Circuit 8, Procedure 4

±160

±240

µA

NOTES:

1. Test condition: output quiescent voltage variation is less than 100mV for 3mA load current.

AC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

Min

Typ

Max

UNIT

Transresistance

(differential output)

Test Circuit 8, Procedure 1

4.9

7

10

k

Ω

Output resistance

(differential output)

DC tested

16

30

42

Ω

Transresistance

(single-ended output)

2.45

3.5

5

k

Ω

Output resistance

(single-ended output)

DC tested

8

15

21

Ω

Bandwidth (-3dB)

200

280

MHz

Input resistance

60

Ω

Input capacitance

7.5

pF

∆R/∆V

Transresistance power

supply sensitivity

9.6

20

%/V

∆R/∆T

Transresistance ambient

temperature sensitivity

0.05

0.1

%/

°C

RMS noise current spectral density

(referred to input)

Test Circuit 2

3.5

6

pA/

√Hz

Integrated RMS noise current over

the bandwidth (referred to input)

Test Circuit 2

nA

Integrated RMS noise current over

the bandwidth (referred to input)

∆f=100MHz

37

nA

the bandwidth (referred to input)

∆f=200MHz

56

nA

∆f=300MHz

71

nA

∆f=100MHz

40

∆f=200MHz

66

∆f=300MHz

89

PSRR

DC tested,

Equivalent AC test circuit 3

20

36

dB

PSRR

DC tested,

Equivalent AC test circuit 4

20

36

dB

PSRR

DC tested,

Equivalent AC test circuit 5

65

dB

PSRR

configuration)

f=0.1MHz, Test Circuit 6

23

dB