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CMM0016 Datasheet(PDF) 1 Page - Mimix Broadband

Part # CMM0016
Description  2.0-20.0 GHz GaAs MMIC 1W Power Amplifier
PDF  5 Pages
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Manufacturer  MIMIX [Mimix Broadband]
Direct Link  http://www.mimixbroadband.com
Logo MIMIX - Mimix Broadband

CMM0016 Datasheet(HTML) 1 Page - Mimix Broadband

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2.0-20.0 GHz GaAs MMIC
1W Power Amplifier
Page 1 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM0016
October 2006 - Rev 13-Oct-06
(TA= 25°C,Vdd = 12V)
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Power Output: 2-18 GHz (@1 dB Gain Compression)
dBm
28.5
Power Output: 2-20 GHz (@1 dB Gain Compression)
dBm
26.5
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Stability 2
Unconditionally Stable
Absolute Maximum Ratings
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Drain Voltage
9.0V (min.) / 13.0V (max.)
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Continuous Power Dissipation
9.5 W
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Storage Temperature
-50°C to +150°C
Channel Temperature
175°C
Operating Backside Temperature
-40°C to (See note 2)
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding.
For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
Chip Diagram
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 15.7) [°C].
Units: mm
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4).
2. Stability factor measured on-wafer.
Features
Small Size: 2.32x1.30x0.076mm
Integrated On-Chip DC Blocking
Single Bias Operation
Directly Cascadable - Fully Matched
Unconditionally Stable
P1dB: 29 dBm, Typ. @ 18 GHz
Linear Gain: 9.5 dB, Typ. @ 18 GHz
pHEMT Technology
Silicon Nitride Passivation
Specifications


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