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NE531FE Datasheet(PDF) 3 Page - NXP Semiconductors |
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NE531FE Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() Philips Semiconductors Linear Products Product specification NE/SE531 High slew rate operational amplifier August 31, 1994 72 DC ELECTRICAL CHARACTERISTICS VS=±15V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE531 NE531 UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT VOS Offset voltage RS≤10kΩ, TA=25°C RS310kΩ, over temp 2.0 5.0 6.0 2.0 6.0 7.5 mV mV ∆VOS Over temp 10 10 µV/°C IOS Offset current TA=25°C TA=High TA=Low 30 200 200 500 50 200 200 300 nA nA nA ∆IOS Over temp 0.4 0.4 nA/ °C IBIAS Input bias current T=25 °C TA=High TA=Low 300 500 500 1500 400 1500 1500 2000 nA nA nA ∆IBIAS Over temp 2 2 nA/ °C VCM Common-mode voltage range TA=25°C ±10 ±10 V CMRR Common-mode rejection ratio TA=25°C, RS≤10kΩ 70 100 dB Over temp RS≤10kΩ 70 90 dB RIN Input resistance TA=25°C 20 20 M Ω VOUT Output voltage swing RL≥10kΩ, over temp ±10 ±13 ±10 ±13 V ICC Supply current TA=25°C 7.0 10 mA TMAX 7.0 10 mA PD Power consumption TA=25°C 210 300 mW RS≤10kΩ, TA=25°C 10 150 µV/V PSRR Power supply rejection ratio RS≤10kΩ, over temp 10 150 µV/V ROUT Output resistance TA=25°C 75 75 Ω TA=25°C, RL≥10kΩ, VOUT=±10V 50 100 20 60 V/mV AVOL Large-signal voltage gain RL≥10kΩ, VOUT=±10V, over temp 25 15 V/mV VINN Input noise voltage 25 °C f=1kHz 20 20 nV/ √Hz ISC Short-circuit current 25 °C 5 15 45 5 15 45 mA AC ELECTRICAL CHARACTERISTICS TA=25°C VS=+15V, unless otherwise specified.1 SYMBOL PARAMETER TEST CONDITIONS SE531 NE531 UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT BW Full power bandwidth 500 500 kHz tS Settling time (1%) (0.1%) AV=+1, VIN=±10V 1.5 2.5 1.5 2.5 µs µs Large-signal overshoot AV=+1, VIN=±10V 2 2 % Small-signal overshoot AV=+1, VIN=400mV 5 5 % tR Small-signal rise time AV=+1, VIN=400mV 300 300 ns SR Slew rate AV=100 35 35 V/ µs AV=10 35 35 V/ µs AV=1 (non-inverting) 20 30 30 V/ µs AV=1 (inverting) 25 35 35 V/ µs NOTES: 1. All AC testing is performed in the transient response test circuit. |
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