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SA5512 Datasheet(PDF) 3 Page - NXP Semiconductors |
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SA5512 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 4 page ![]() Philips Semiconductors Linear Products Product specification NE/SA/SE5512 Dual high-performance operational amplifier August 31, 1994 80 ELECTRICAL PERFORMANCE CHARACTERISTICS VCC = ±15V, TA = 25°C over temperature range, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE5512 NE/SA5512 UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT VOS Input offset voltage RS=100Ω TA=+25°C Over temp. 0.7 1 2 3 1 1.5 5 6 mV ∆VOS/∆T 4 5 µV/°C IOS Input offset current RS=100kΩ TA=+25°C Over temp. 3 4 10 20 6 8 20 30 nA ∆IOS/∆T 30 40 pA/ °C IBIAS Input bias current RS=100kΩ TA=+25°C Over temp. 3 4 10 20 6 8 20 30 nA ∆IBIAS/∆T 30 40 pA/ °C RIN Input resistance differential TA=+25°C 100 100 M Ω VCM Input common mode range TA=+25°C Over temp. ±13.5 ±13 ±13.7 ±13.2 ±13.5 ±13 ±13.7 ±13.2 V CMRR Input common-mode rejection ratio VCC=±15V VIN=±13.5V CMRR Input common-mode rejection ratio TA=+25°C 70 100 70 100 dB ratio VIN=±13V Over temp. AV Large-signal voltage gain RL=2kΩ TA=25°C VO=±10V over temp. 50 25 200 50 25 200 V/mV SR Slew rate TA=25°C 0.6 1 1 V/ µs GBW Small-signal unity gain band- width TA=25°C 3 3 MHz θM Phase margin TA=25°C 45 45 degree VOUT Output voltage swing RL=2kΩ TA=25°C Over temp. ±13 ±12.5 ±13.5 ±13 ±13 ±12.5 ±13.5 ±13 V VOUT Output voltage swing RL=600Ω1 TA=25°C Over temp. ±10 ±7.5 ±11.5 ±9 ±10 ±8 ±11.5 ±9 V ICC Power supply current RL=Open TA=25°C Over temp. 3.4 3.6 5 5.5 3.4 3.6 5 5.5 mA PSRR Power supply rejection ratio Over temp. 80 100 80 100 dB AA Amplifier-to-amplifier coupling f=1kHz to 20kHz, TA=25°C -120 -120 dB THD Total harmonic distortion f=10kHz TA=25°C VO=7VRMS 0.01 0.01 % VNOISE Input noise voltage f=1kHz TA=25°C 30 30 nV/ √Hz INOISE Input noise current f=1kHz TA=25°C 0.2 0.2 pA/ √Hz ISC Short-circuit current ±15V, TA=25°C 40 40 mA NOTES: 1. Not to exceed maximum package power dissipation. |
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