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ISB3028 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISB3028
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISB3028 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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www.iscsemi.com
1
isc Silicon NPN Power Transistor
ISB3028
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
VCEO: 450V(Min)
·
Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max.)@ IC= 0.7A
APPLICATIONS
·
Electronic Ballast
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
850
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-Peak
4
A
IB
Base Current
1.5
A
IBM
Base Current-Peak
3
A
PC
Total Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.17
℃
/W
2


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