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Die Size

(Excluding Saw Street)

2500 x 2500

98 x 98

µm

mils

Emitter Pad Size

492 x 786

19.37 x 30.95

µm

mils

Base Pad Size

606 x 606

23.86 x 23.86

µm

mils

Die Thickness

260 (±25)

10.2 (±1)

µm

mils

Top Metal Composition

Al

Back Metal Composition

Ti/Ni/Ag

NPN Transistor Bare Die – TIP122

Bipolar Darlington Power Transistor in bare die form

Complement to PNP TIP127



Collector current up to 5A



Low VCE(sat)



Very high hFE



Solderable back metal



High Reliability tested grades for Military + Space

Rev 1.0

22/08/23

Features:

Die Dimensions in µm (mils)

2500 (98)

DIE BACK = COLLECTOR

Ordering Information:

The following part suffixes apply:



No suffix - Commercial grade die



“H” – Hi-rel grade die + MIL-STD-38534 Class H LAT



“K” – Hi-rel grade die + MIL-STD-38534 Class K LAT.

LAT = Lot acceptance Test.

For information on Hi-Rel LAT flows please see below.

www.siliconsupplies.com\bare-die-lot-qualification

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (100 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

BASE