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ISCF8026 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # ISCF8026
Description  SiC N-Channel MOSFET
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8026 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8026 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8026 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8026 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8026 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISCF8026
eq SCTH40N120G2V7AG
SiC N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= 0.1mA
1200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 5mA
2.3
2.8
3.6
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 18V
ID=20A
TC=25℃
--
75
85
mΩ
TC=175℃
--
125
--
IGSS
Gate Source Leakage Current
VGS= 18V, VDS= 0V
--
--
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 650V
VGS = 0V
TC=25℃
--
1
10
μA
TC=175℃
--
5
--
gfs
Transconductance
VDS=20V,ID=20A
--
10
--
S
Ciss
Input Capacitance
VGS = 0V,
VDS =1000V,
f = 1.0MHz,
VAC=25mV
TJ=25℃
--
920
--
pF
Coss
Output Capacitance
--
57
--
Crss
Reverse Transfer Capacitance
--
3.9
--
Qg
Total Gate Charge
VDD=800V,
ID= 20A,
VGS= - 4to +18V
--
40
--
nC
Qgs
Gate-Source Charge
--
7
--
Qgd
Gate-Drain Charge
--
19
--
td(on)
Turn-on Delay Time
VGS= - 4to +15V
ID= 20A
VDS=800V
Rg=0Ω
L=120uH
--
13
--
ns
tr
Turn-on Rise Time
--
19
--
td(off)
Turn-off Delay Time
--
14
--
tf
Turn-off Fall Time
--
15
--
EON
Turn-On Switching Energy
--
270
--
μ
J
EOFF
Turn-Off Switching Energy
--
35
--



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