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FOD814 Datasheet(PDF) 4 Page - ON Semiconductor

Part # FOD814
Description  4-Pin DIP Phototransistor Optocouplers
PDF  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FOD814 Datasheet(HTML) 4 Page - ON Semiconductor

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FOD814, FOD817
www.onsemi.com
4
ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise specified. (continued)
AC TRANSFER CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
fC
Cut−Off Frequency
FOD814
VCE = 5 V, IC = 2 mA,
RL = 100 Ω, −3 dB
15
80
−
kHz
tr
Response Time (Rise)
FOD814,
FOD817
VCE = 2 V, IC = 2 mA,
RL = 100 W (Note 3)
−
4
18
ms
tf
Response Time (Fall)
FOD814,
FOD817
−
3
18
ISOLATION CHARACTERISTICS
Symbol
Parameter
Device
Test Conditions
Min
Typ
Max
Unit
VISO
Input−Output Isolation Voltage
(Note 4)
FOD814,
FOD817
f = 60 Hz, t = 1 min,
II−O ≤ 2 mA
5000
−
−
VACRMS
RISO
Isolation Resistance
FOD814,
FOD817
VI−O = 500 VDC
5x1010
1x1011
−
W
CISO
Isolation Capacitance
FOD814,
FOD817
VI−O = 0, f = 1 MHz
−
0.6
1.0
pf
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Current Transfer Ratio (CTR) = IC / IF x 100%
3. For test circuit setup and waveforms, refer to page 5.
4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES
TA = 25°C unless otherwise specified.
Figure 3. Collector Power Dissipation vs.
Ambient Temperature (FOD814)
−55 −40 −20
0
20
40
60
80
100 120
0
50
100
150
200
TA, Ambient Temperature (5C)
0
50
100
150
200
−55 −40 −20
0
20
40
60
80
100 120
Figure 4. Collector Power Dissipation vs.
Ambient Temperature (FOD817)
TA, Ambient Temperature (5C)



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