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IRG4PC40SPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PC40SPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 60 IC @ TC = 100°C Continuous Collector Current 31 A ICM Pulsed Collector Current Q 120 ILM Clamped Inductive Load Current R 120 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy S 15 mJ PD @ TC = 25°C Maximum Power Dissipation 160 PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) IRG4PC40SPbF Standard Speed IGBT INSULATEDGATEBIPOLARTRANSISTOR PD -95171 E C G n-channel TO-247AC Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Benefits VCES = 600V VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A 04/23/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.77 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 6 (0.21) ––– g (oz) Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 |
Similar Part No. - IRG4PC40SPBF |
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