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2N2432 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N2432
Description  NPN SILICON LOW POWER TRANSISTOR
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N2432 Datasheet(HTML) 2 Page - Microsemi Corporation

  2N2432 Datasheet HTML 1Page - Microsemi Corporation 2N2432 Datasheet HTML 2Page - Microsemi Corporation  
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2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCB = 30 Vdc
2N2432
VCB = 25 Vdc
2N2432
VCB = 40 Vdc
2N2432A
VCB = 45 Vdc
2N2432A
ICBO
100
10
100
10
µAdc
ηAdc
µAdc
ηAdc
Emitter-Collector Cutoff Current
VEC = 15 Vdc, VBC = 0 Vdc
IECS
2.0
ηAdc
Emitter-Base Cutoff Current
VEB = 15 Vdc
IEBO
2.0
ηAdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
hFE
30
80
400
Forward-Current Transfer Ratio (Inverted Connection)
IC = 0.2 mAdc, VCE = 5.0 Vdc
2N2432
2N2432A
hFE(inv)
2.0
3.0
Collector-Emitter Saturation Voltage
IC = 10 Vdc, IB = 0.5 mAdc
VCE(sat)
0.15
mVdc
Emitter-Collector Offset Voltage
IE = 0 mAdc, IB = 200 µAdc
2N2432
2N2432A
IE = 0 mAdc, IB = 1.0 mAdc
2N2432
2N2432A
VEC(ofs)
0.5
0.4
0.1
0.7
mVdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz
h
fe
2.0
10
Output Capacitance
VCB = 0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
12
pF
Input Capacitance
VEB = 0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cibo
12
pF
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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