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2N4239 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # 2N4239
Description  NPN MEDIUM POWER SILICON TRANSISTOR
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N4239 Datasheet(HTML) 1 Page - Microsemi Corporation

  2N4239 Datasheet HTML 1Page - Microsemi Corporation 2N4239 Datasheet HTML 2Page - Microsemi Corporation  
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TECHNICAL DATA
NPN MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/581
Devices
Qualified Level
2N4237
2N4238
2N4239
JANTX
JANTXV
MAXIMUM RATINGS (TA = 25
0C Unless Otherwise noted)
Ratings
Symbol 2N4237 2N4238 2N4239 Units
Collector-Emitter Voltage
VCEO
40
60
80
Vdc
Collector-Base Voltage
VCBO
50
80
100
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
1.0
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +25
0C(2)
PT
1.0
6.0
W
W
Operating & Storage Temperature Range
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
29
0C/W
1) Derate linearly 5.7 mW/
0C for TA > +250C
2) Derate linearly 34 mW/
0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N4237
2N4238
2N4239
V(BR)CEO
50
80
100
Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
0.5
mAdc
Collector-Emitter Cutoff Current
VCE = 90 Vdc, VBE = 1.5 Vdc
VCE = 50 Vdc
2N4237
VCE = 80 Vdc
2N4238
VCE = 10 Vdc
2N4239
ICEX
100
100
100
nAdc
Collector-Base Cutoff Current
VCE = 50 Vdc
2N4237
VCE = 80 Vdc
2N4238
VCE = 10 Vdc
2N4239
ICBO
100
100
100
nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-39*


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