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2N4427 Datasheet(PDF) 2 Page - Advanced Power Technology

Part # 2N4427
Description  RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
PDF  6 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

2N4427 Datasheet(HTML) 2 Page - Advanced Power Technology

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2N4427.PDF 6-25-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct
2N4427
ELECTRICAL SPECIFICATIONS (Tcase = 25
°C)
STATIC
(off)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCER
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
40
-
-
Vdc
BVCEO
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
20
-
-
Vdc
ICEO
Collector Cutoff Current
(VCE = 12 Vdc, IB = 0)
-
-
20
µA
ICEX
Collector Cutoff Current
(VCE = 40 Vdc, VBE = -1.5 Vdc)
-
-
100
µA
IEBO
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
-
-
100
µA
(on)
HFE
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 360 mAdc, VCE = 5.0 Vdc)
10
5
-
-
200
-
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
-
-
0.5
Vdc
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
fT
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
500
-
-
MHz
COB
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
-
4.0
-
pF



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