SMD ESD Protection Diode

Page 2

Comchip Technology CO., LTD.

REV:A

QW-JP071

Company reserves the right to improve product design , functions and reliability without notice.

Rating and Characteristic Curves (CPDVR7V0-HF)

8

16

1

2

4

3

20

12

Fig.4 - VC ― IPP

Reverse Peak Pulse Current, IPP (A)

5

Ta=25°C

tp=8/20µs

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

V(BR)

IT = 1mA

8.2

IR

µA

VRWM = 7V

1

10.5

V

VRWM

7.0

Electrical Characteristics (at TA=25°C unless otherwise noted)

Reverse stand off voltage (Note 1)

Reverse leakage current

Breakdown voltage

V

Notes: 1. Other voltages available upon request.

VC

V

IPP = 5A

9

CJ

pF

VR = 0V, f = 1MHz

Clamping voltage (Note 2)

Junction capacitance

IT = 100mA

17

7.0

-12

-10

-8

-6

-4

-2

0

2

4

6

8

10

12

-100

-75

-50

-25

0

25

50

75

100

REVERSE VOLT

AGE

V (V)

T

a

=25 ℃

T

a

=100 ℃

Rev erse

Characteristics

Pulsed

-12

-10

-8

-6

-4

-2

0

2

4

6

8

10

12

-100

-75

-50

-25

0

25

50

75

100

REVERSE VOLT

AGE

V (V)

T

a

=25 ℃

T

a

=100 ℃

Rev erse

Characteristics

Pulsed

Reverse Voltage, VR (V)

0

2

4

8

3

2

1

0

4

6

12

Fig.3 - Capacitance Characteristics

Ta=25°C

f=1MHz

5

7

6

10

Reverse Voltage, VR (V)

-12

-100

Fig.2 - Reverse Characteristics

-75

-50

25

100

-10

-2

0

4

2

6

8 10 12

-4

-6

-8

0

75

-25

50

Ta=25°C

Ta=100°C

Pulsed

2. Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC 61000-4-5.

Fig.1 - 8/20µs Peak Pulse Current

Waveform Acc. IEC 61000-4-5

0%

Time, (µs)

0

10

20

30

20%

40%

60%

80%

100%

120%

40

100%IPP: 8µs

50%IPP: 20µs

-t

e