 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
30ETH06S Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
30ETH06S Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  Hyperfast Rectifier 30ETH06S www.iscsemi.com 1 FEATURES · Hyperfast recovery time · Low forward voltage drop · Low leakage current APPLICATIONS · PFC boost stage · Inverters or as freewheeling diodes ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 600 V IF(AV) Average Rectified Forward Current TC = 103℃ 30 A IFSM Non-repetitive Peak Surge Current 200 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.1 ℃ /W 2 2 3 1 |
Similar Part No. - 30ETH06S |
|
Similar Description - 30ETH06S |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
