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W16NK60Z Datasheet(PDF) 3 Page - STMicroelectronics

Part # W16NK60Z
Description  N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH??MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

W16NK60Z Datasheet(HTML) 3 Page - STMicroelectronics

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STP16NK60Z - STB16NK60Z-S - STW16NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 7 A
0.38
0.42
Ω
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
600
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 7 A
12
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
2650
285
62
pF
pF
pF
Coss eq. (*)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480V
158
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 480 V, ID = 14 A
RG = 4.7
Ω VGS = 10 V
(Resistive Load see, Figure 3)
30
25
70
15
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 14 A,
VGS = 10V
86
17
46
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
14
56
A
A
VSD (1)
Forward On Voltage
ISD = 14 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 14 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
490
5.4
22
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 14 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
585
7
24
ns
µC
A
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
14
56
A
A



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