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PCF84C00T Datasheet(PDF) 10 Page - NXP Semiconductors |
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PCF84C00T Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 24 page ![]() 1996 Nov 25 10 Philips Semiconductors Product specification 8-bit microcontroller with I2C-bus interface PCF84C00 8 HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, it is good practice to take normal precautions appropriate to handling MOS devices. See “Data Handbook IC14 Section: Handling MOS devices”. 9 DC CHARACTERISTICS VDD = 2.5 to 5.5 V; VSS =0V; Tamb = −40 to +85 °C; all voltages with respect to VSS; unless otherwise specified. Notes 1. VIL =VSS; VIH =VDD; open drain outputs connected to VSS; all other outputs, including XTAL2, open (typical values at 25 °C with crystal connected between XTAL1 and XTAL2). 2. VIL =VSS; VIH =VDD; RESET and T1 at VSS; INT/T0 at VDD; crystal connected between XTAL1 and XTAL2; open drain outputs connected to VSS; all other outputs open. Tamb operating ambient temperature range Ptot(max) = 100 mW −40 +70 °C Ptot(max) =30mW −40 +85 °C Tj operating junction temperature − 90 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDD operating supply voltage see Fig.6 2.5 − 5.5 V IDD operating supply current note 1; see Fig.7 VDD =5V; fxtal =10MHz − 1.6 3.2 mA VDD =5V; fxtal = 6 MHz − 12 mA VDD =3V; fxtal = 3.58 MHz − 0.3 0.6 mA IDD(idle) supply current (Idle mode) note 1; see Fig.8 VDD =5V; fxtal =10MHz − 0.8 1.6 mA VDD =5V; fxtal = 6 MHz − 0.5 1 mA VDD =3V; fxtal = 3.58 MHz − 0.15 0.4 mA IDD(stp) supply current (Stop mode) notes 1 and 2; see Fig.9 VDD = 2.5 V; Tamb =25 °C − 1.2 2.5 µA VDD = 2.5 V; Tamb =85 °C −− 10 µA Inputs VIL LOW level input voltage 0 − 0.3VDD V VIH HIGH level input voltage 0.7VDD − VDD V ILI input leakage current VSS < VI < VDD −1 − +1 µA Outputs IOL LOW level output sink current VDD =5V ±10%; VO = 0.4 V (except P2.3/SDA, SCLK and Port 1); see Fig.10 1.6 3 − mA P2.3/SDA, SCLK; see Figs 11 and 12 3 −− mA IOH HIGH level pull-up output source current VDD =5V ±10%; VO = 0.7VDD −40 −− µA VDD =5V ±10%; VO =Vss −− −400 µA IOH HIGH level push-pull output source current VDD =5V ±10%; VO =VDD − 0.4 V; see Fig.13 −1.6 −3 − mA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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