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C2M1000170D Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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C2M1000170D Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISCF8035 eq C2M1000170D SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 1.4Ω(MAX)@VGS=20V Tj=25℃ · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · High-voltage Capacitive Loads · Motor drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1700 V VGSS Gate-Source Opetation Voltage -10/+25 V ID Drain Current-Continuous 5 A Drain Current-Continuous@Tc=100℃ 3.5 A IDM Drain Current-Single Pluse 15 A PD Total Dissipation @TC=25℃ 69 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
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