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DP3080 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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DP3080 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 8 page ![]() DP3080 Trench N-MOSFET 30V, 3.9m Ω, 80A DP3080_REV1.1_EN www.depuw.com 1 Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDEC criteria Applications • Motor control and drive • Battery management • UPS (Uninterrupible Power Supplies) Product Summary 100% DVDS Tested 100% Avalanche Tested Vds 30V ID 80A RDS(ON) typ(at VGS = 10V) 3.9mΩ RDS(ON) typ(at VGS = 4.5V) 5.5mΩ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 80 A Drain Current-Continuous(T=100℃) ID (100℃) 61 A Pulsed drain current (TC = 25°C, tp limited by Tjmax) ID pulse 320 A Avalanche energy, single pulse (L=0.3mH, Rg=25Ω) EAS 48 mJ Power dissipation (TC = 25°C) Ptot 75 W Operating junction and storage temperature Tj , T stg -55 To 150 °C Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction – case. RthJC 1.66 ℃ /W Thermal resistance, junction –ambient(min. footprint) RthJA 106 赵先生:18033419374 QQ:2171689052 |
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