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DP3080 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # DP3080
Description  Trench N-MOSFET 30V, 3.9mΩ, 80A
PDF  8 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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DP3080 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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DP3080
Trench N-MOSFET 30V, 3.9m
Ω, 80A
DP3080_REV1.1_EN
www.depuw.com
1
Features
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance RDS(on)
• Excellent QgxRDS(on) product(FOM)
• Qualified according to JEDEC criteria
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Product Summary
100% DVDS Tested
100% Avalanche Tested
Vds
30V
ID
80A
RDS(ON) typ(at VGS = 10V)
3.9mΩ
RDS(ON) typ(at VGS = 4.5V) 5.5mΩ
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
P-Channel
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
80
A
Drain Current-Continuous(T=100℃)
ID (100℃)
61
A
Pulsed drain current (TC = 25°C, tp
limited by Tjmax)
ID pulse
320
A
Avalanche energy, single pulse
(L=0.3mH, Rg=25Ω)
EAS
48
mJ
Power dissipation (TC = 25°C)
Ptot
75
W
Operating junction and storage
temperature
Tj , T stg
-55 To 150
°C
Thermal Resistance
Parameter
Symbol
Max
Unit
Thermal resistance, junction – case.
RthJC
1.66
℃
/W
Thermal resistance, junction –ambient(min. footprint)
RthJA
106
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