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IXTQ36P15 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTQ36P15 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1126 eq IXTQ36P15 P-Channel Power MOSFET www.iscsemi.com 11 DESCRIPTION · Drain Current –ID= -36A@ TC=25℃ · Drain Source Voltage- : VDSS= -150V(Min) · Static Drain-Source On-Resistance : RDS(on) = 110mΩ（max）@VGS= -10V APPLICATIONS · Switching applications · DC Choppers · Automatic Test Equipment ABSOLUTE MAXIMUM RATINGS(TC=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -150 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous -36 A IDM Drain Current-Single Pluse -90 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.42 ℃ /W |
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