MAXIMUM RATINGS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

RF POWER MOSFETs

N- CHANNEL ENHANCEMENT MODE

200V

300W

45MHz

The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial

RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of

operation.

•

Output Power = 300 Watts.

•

Gain = 16dB (Class AB)

•

Efficiency = 75% (Class C)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(ON)

I

DSS

I

GSS

g

fs

V

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

)

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Gate Threshold Voltage (V

MIN

TYP

MAX

1000

0.90

25

250

±100

3.3

7

9

24

UNIT

Volts

ohms

µA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

R

θJC

T

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Power Dissipation @ T

Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF466FL

1000

1000

13

±30

450

0.30

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C/W

°C

G

D

S

ARF466FL

ARF466FL