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STB18NF30 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STB18NF30 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1101 eq STB18NF30 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATIONS · Switching · LLC converters, resonant converters Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 330 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 18 A ID Drain Current-Continuous@TC=100℃ 12 A IDM Drain Current-Single Pulse 72 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W 2 2 3 1 |
Similar Part No. - STB18NF30 |
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Similar Description - STB18NF30 |
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