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BAS316WS Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd . |
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BAS316WS Datasheet(HTML) 1 Page - Goodwork Semiconductor Co., Ltd . |
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1 / 3 page  PIN DESCRIPTION 1 Cathode 2 Anode Silicon Epitaxial Planar Switching Diode Applications • High-speed switching PINNING A6 1 2 Top View Marking Code: "A6 " Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 100 V Reverse Voltage VR 100 V Continuous Forward Current IF 250 mA Repetitive Peak Forward Current IFRM 500 mA Non-Repetitive Peak Forward Current t = 1 µs t = 1 ms t = 1 s IFSM 4 1 0.5 A Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 65 to + 150 O C Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF 0.715 0.855 1 1.25 V Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR 30 1 30 50 nA µA µA µA Diode Capacitance at VR = 0 V, f = 1 MHz Ctot 1.5 pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω trr 4 ns MARKING:A6 AS316WS B |
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Similar Description - BAS316WS |
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