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STD12NF06L Datasheet(PDF) 5 Page - STMicroelectronics |
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STD12NF06L Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STD12NF06L Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 12 A ISDM Source-drain current (pulsed) 48 A VSD (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 12A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 12A, di/dt = 100A/µs, VDD = 16V, TJ = 150°C Figure 14 on page 8 50 65 2.5 ns µC A |
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