BAS35 datasheet(1/3 Pages) GWSEMI

Part #	BAS35

Description	Silicon Epitaxial Planar Switching Diodes

PDF	3 Pages

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Manufacturer	GWSEMI [Goodwork Semiconductor Co., Ltd .]

Direct Link	http://www.goodwork.com.tw/

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Silicon Epitaxial Planar Switching Diodes

BAS29

BAS31

BAS35

3

1

2

1

2

1

2

BAS29 Marking Code: L20

BAS31 Marking Code: L21

BAS35 Marking Code: L22

SOT-23 Plastic Package

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

VRRM

120

V

Maximum Average Forward Current

IF(AV)

200

mA

Repetitive Peak Forward Current

IFRM

600

mA

Non-Repetitive Peak Forward Surge Current

t = 1 µs

t = 1 s

IFSM

2

1

A

Power Dissipation

Ptot

350

mW

Junction Temperature

Tj

150

O

C

Storage Temperature Range

Tstg

- 55 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at IF = 10 mA

at IF = 50 mA

at IF = 100 mA

at IF = 200 mA

at IF = 400 mA

VF

-

750

840

900

1

1.25

mV

V

Reverse Current

at VR = 90 V

at VR = 90 V, TJ = 150 OC

IR

-

100

nA

µA

Reverse Breakdown Voltage

at IR = 1 mA

V(BR)R

120

-

V

Total Capacitance

at VR = 0 V, f = 1 MHz

CT

-

35

pF

Reverse Recovery Time

at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω

trr

-

50

ns

BAS29-BAS31-BAS35

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BAS35 Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd .

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