BSP40 datasheet(1/1 Pages) ZETEX

Part #	BSP40

Description	SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 FEBRUARY 1996

7

COMPLEMENTARY TYPES BSP40 BSP30

BSP42 BSP32

PARTMARKING DETAIL

Device type in full

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

BSP40

BSP42

UNIT

Collector-Base Voltage

VCBO

70

90

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Base Current

IB

100

mA

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

BSP40

Breakdown Voltage BSP42

V(BR)CBO

70

90

V

IC=100µA

Collector-Emitter

BSP40

Breakdown Voltage BSP42

V(BR)CEO

60

80

V

IC=10mA

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=10µA

Collector Cut-Off

Current

ICBO

100

50

nA

µ

A

VCB=60V

VCB=60V, Tamb=125°C

Collector-Emitter

Saturation Voltage

VCE(sat)

0.25

0.5

V

IC =150mA, IB=15mA

IC =500mA, IB=50mA

Base-Emitter

Saturation Voltage

VBE(sat)

1.0

1.2

V

IC=150mA, IB=15mA

IC =500mA, IB=50mA

Static Forward

Current Transfer Ratio

hFE

10

40

30

120

IC=100µA, VCE=5V

IC =100mA, VCE=5V

IC =500mA, VCE=5V

Collector Capacitance

Cc

12

pF

VCB=10V, f =1MHz

Emitter Capacitence

Ce

90

pF

VEB=0.5V, f=1MHz

Transition Frequency

fT

100

MHz

IC=50mA, VCE=10V

f =35MHz

Turn-On Time

Ton

250

ns

VCC=20V, IC =100mA

IB1=-IB2=-5mA

Turn-Off Time

Toff

1000

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT493 datasheet.

BSP40

BSP42

C

E

B

3 - 63

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