BST40 datasheet(1/1 Pages) ZETEX

Part #	BST40

Description	SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – JANUARY 1996

7

COMPLEMENTARY TYPE – BST15

PARTMAKING DETAIL — AT2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

300

V

Collector-Emitter Voltage

VCEO

250

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

1A

Continuous Collector Current

IC

500

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

300

V

IC=100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

250

V

IC=1mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=100µA, IC=0

Emitter Cut-Off Current

IEBO

10

µA

VEB=5V, IE=0

Collector Cut-Off Current

ICBO

20

nA

VCB=300V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.5

V

IC=50mA, IB=4mA

Base-Emitter

Saturation Voltage

VBE(sat)

1.3

V

IC=50mA, IB=4mA

Static Forward Current

Transfer Ratio

hFE

40

IC=20mA, VCE=10V*

Transition Frequency

fT

70

MHz

IC=10mA, VCE=10V,

f=5MHz

Output Capacitance

Cobo

2pF

VCB=10V, f=1MHz

Input Capacitance

Cibo

30

pF

VEB=5V, f=1MHz

* Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

For typical characteristics graphs see FMMTA42 datasheet.

BST40

C

B

E

SOT89

3 - 78

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