BS2 datasheet(1/1 Pages) ZETEX

Part #	BS2

Description	SOT89 PNP SILICON PLANAR DARLINGTON TRANSISTOR

PDF	1 Pages

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT89 PNP SILICON PLANAR

DARLINGTON TRANSISTOR

ISSUE 4 – MARCH 1996

7

FEATURES

*

Fast Switching

*

High h

FE

PARTMAKING DETAIL —

BS2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-10

V

Pea Pulse Current

ICM

-1.5

A

Continuous Collector Current

IC

-500

mA

Base Current

IB

-100

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-80

V

IC=-10µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-60

V

IC=-10mA, IB=0*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-10

V

IE=-10µA, IC=0

Emitter Cut-Off Current

IEBO

-10

µA

VEB=-8V, IE=0

Collector-Emitter

Cut-Off Current

ICES

-10

µA

VCE=-60V, IC=0

Collector-Emitter

Saturation Voltage

VCE(sat)

-1.3

V

IC=500mA, IB=-0.5mA

Tj=150°C

Base-Emitter

Saturation Voltage

VBE(sat)

-1.9

V

IC=-500mA, IB=-0.5mA

Static Forward Current

Transfer Ratio

hFE

1K

2K

IC=-150mA, VCE=-10V*

IC=-500mA, VCE=-10V*

Turn On Time

ton

400 Typical

ns

IC=500mA

IBon=IBoff=-0.5mA

Turn Off Time

toff

1.5K Typical

ns

* Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

For typical characteristics graphs see FZTA63 (SOT223) datasheet.

SOT89

BST61

C

B

E

3 - 81

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