PDTA114EEF datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 21

Philips Semiconductors

Preliminary speciﬁcation

PNP resistor-equipped transistor

PDTA114EEF

THERMAL CHARACTERISTICS

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air; note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −50 V

−−−100

ICEO

collector cut-off current

IB = 0; VCE = −30 V

−−−1

µA

IB = 0; VCE = −30 V; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−−400

µA

hFE

DC current gain

IC = −5 mA; VCE = −5V

−−

VCEsat

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA

−−−150

Vi(off)

input-off voltage

IC = −100 µA; VCE = −5V

−−1.1

−0.8

Vi(on)

input-on voltage

IC = −10 mA; VCE = −300 mV

−2.5

−1.8

−

input resistor

Ω

resistor ratio

0.8

1.2

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz −−

3pF

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