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IRL3103LPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRL3103LPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRL3103SPbF IRL3103LPbF HEXFET® Power MOSFET 04/19/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.6 RθJA Junction-to-Ambient (PCB mount)** ––– 40 Thermal Resistance www.irf.com 1 VDSS = 30V RDS(on) = 12mΩ ID = 64A S D G Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 94 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 16 V IAR Avalanche Current 34 A EAR Repetitive Avalanche Energy 22 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) AdvancedHEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3103L) is available for low- profile applications. l Advanced Process Technology l Surface Mount (IRL3103S) l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D2Pak IRL3103S TO-262 IRL3103L °C/W PD - 95150 |
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