BC856 datasheet(2/4 Pages) GWSEMI

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C85xx-SERIES

TRANSISTOR(PNP)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

BC856

BC857

BC858

VCBO

IC= -10μA, IE=0

-80

-50

-30

Collector-emitter breakdown voltage

BC856

BC857

BC858

VCEO

IC= -10mA, IB=0

-65

-45

-30

Emitter-base breakdown voltage

VEBO

IE= -1μA, IC=0

-5

Collector cut-off current

BC856

BC857

BC858

ICBO

VCB= -70 V , IE=0

VCB= -45 V , IE=0

VCB= -25 V , IE=0

-0.1

μA

Collector cut-off current

BC856

BC857

BC858

ICEO

VCE= -60 V , IB=0

VCE= -40 V , IB=0

VCE= -25 V , IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5 V , IC=0

-0.1

μA

DC current gain

BC856

BC856B, 857B,858B

BC857C,BC858C

hFE

VCE= -5V,IC= -2mA

125

220

420

250

475

800

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA,IB= -5 mA

-0.5

Base-emitter saturation voltage

VBE(sat)

IC= -100mA, IB= -5mA

-1.1

Transition frequency

VCE= -5 V, IC= -10mA

f=100MHz

100

MHz

Collector capacitance

Cob

VCB=-10V, f=1MHz

4.5

BC856A, 857A,858A

BC857

125

475

125

800

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