C1815 datasheet(1/3 Pages) GWSEMI

Part #	C1815

Description	Power dissipation

PDF	3 Pages

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Manufacturer	GWSEMI [Goodwork Semiconductor Co., Ltd .]

Direct Link	http://www.goodwork.com.tw/

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FEATURE

Power dissipation

MARKING :

HF

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

200

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100µA,

IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 0.1mA,

IB=0

50

V

Collector cut-off current

ICBO

VCB=60V,

IE=0

0.1

µA

Collector cut-off current

ICEO

VCE=50V,

IB=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 5V,

IC=0

0.1

µA

DC current gain

hFE

VCE= 6V,

IC= 2mA

200

400

Collector-emitter saturation voltage

VCE(sat)

IC=100mA,

IB= 10mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA,

IB= 10mA

1

V

Transition frequency

fT

VCE=10V,

IC= 1mA,

f=30MHz

80

MHz

1．BASE

SOT-23

2．EMITTER

3．COLLECTOR

C1815

TRANSISTOR(NPN)

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C1815 Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd .

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