S9012 datasheet(1/3 Pages) GWSEMI

Part #	S9012

Description	TRANSISTOR(PNP)

PDF	3 Pages

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Manufacturer	GWSEMI [Goodwork Semiconductor Co., Ltd .]

Direct Link	http://www.goodwork.com.tw/

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1 / 3 page

FEATURES

Complementary to S9013

Excellent hFE linearity

MARKING: 2T1

MAXIMUM RATINGS (T

A=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

PC

Collector Power Dissipation

300

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -100µA,

IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA,

IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA,

IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V,

IE=0

-0.1

µA

Collector cut-off current

ICEO

VCE=-20V,

IB=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -5V,

IC=0

-0.1

µA

DC current gain

hFE

VCE=-1V,

IC= -50mA

120

200

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,

IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA,

IB= -50mA

-1.2

V

Transition frequency

fT

VCE=-6V,

IC= -20mA

f=30MHz

150

MHz

Collector output capacitance

Cob

VCB=

-10V, IE=0, f=1MHz

5

pF

BASE

SOT-23

EMITTER

COLLECTOR

S9012

TRANSISTOR(PNP)

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S9012 Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd .

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