AD8156ABCZ datasheet(3/20 Pages) AD

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AD8156

Rev. 0 | Page 3 of 20

SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

VTTI = VTTO = VCC = 3.3 V, VEE = 0 V, RL = 50 Ω, differential output swing = 800 mV, ac-coupled, data rate = 6.25 Gbps, PRBS 223−1,

VIN = 1 V p-p differential, TA = 25°C, unless otherwise noted.

Table 1.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

DYNAMIC PERFORMANCE

Maximum Data Rate

NRZ data

6.25

Gbps

Deterministic Jitter

Data date < 6.25 Gbps

ps p-p

Random Jitter

0.8

ps rms

Propagation Delay

tPD

Input to output

1000

Propagation Delay Match

Output Fall Time

Differential, 20% to 80%

Output Rise Time

Differential, 20% to 80%

INPUT CHARACTERISTICS

Input Voltage Swing

VIN

Differential

200

2000

mV p-p

Input Voltage Range

Single-ended

VEE + 1.5

VCC

Input Voltage Range

VCM

Common-mode

VEE + 1.6

VCC

Input Termination

RIN

Single-ended

OUTPUT CHARACTERISTICS

Output Voltage Swing

VOUT

Differential, programmable

800

1850

mV p-p

Output Voltage Range

Common-mode

VEE + 1.6

VCC

Output Termination

ROUT

Single-ended

POWER SUPPLY

VCC Operating Range

VCC

VEE = 0 V

3.0

3.3

3.6

Supply Current

ICC1

All disabled

ICC1

All outputs on, no equalization

ICC1

All outputs and equalizers on

141

ITTI

800 mV differential swing

ITTO

800 mV differential swing

Power Dissipation2

All disabled

All outputs on, no equalization

400

All outputs and equalizers on

700

THERMAL CHARACTERISTICS

Operating Temperature Range

−40

°C

LOGIC INPUT CHARACTERISTICS

VCC = 3.3 V dc

Input VIN High

2.0

VCC

Input VIN Low

0.8

1 ICC supply current excludes input and output termination currents. Currents at VTTI and VTTO count in power dissipation, but are not included in ICC. Note that in a CML

output structure with separate termination supplies, all of the output and input current is drawn from VTTI and the termination resistors, not from Vcc.

2 Power dissipation includes power due to 800 mV p-p differential input and output voltages; this is the true representation of power dissipated on and used by the

chip at an 800 mV p-p differential signal level.

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