MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃unless otherwise specified

Vout

Vin

Vout

PW=100μS

D=1%

td(on) tr

td(off) tf

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static Parameters

Source to Source Breakdown Voltage

BVSSS

IS=1mA ,VGS=0V

20

V

Zero-Gate Voltage Source Current

ISSS

VSS=16V,VGS=0V

100

nA

Gate to Source Leakage Current

IGSS

VSS=0V,VGS= ±10V

±10

μA

Gate to Source Threshold Voltage

VGS(th)

VSS=VGS, IS=250μA

0.4

1.2

V

Source to Source On-state

Resistance

RSS(on)

VGS=4.5V,IS=3A

2.9

4.9

6.8

mΩ

VGS=4.0V,IS=3A

3.0

5.1

7.1

mΩ

VGS=3.8V,IS=3A

3.1

5.2

7.3

mΩ

VGS=3.1V,IS=3A

3.4

5.7

mΩ

Input Capacitance

Ciss

VSS=10V, VGS=0V,f=1kHz

2609

pF

Output Capacitance

Coss

362

pF

Reverse Transfer Capacitance

Crss

295

pF

Turn-on Delay Time

td(on)

VDD=10V,IS=5A, VGS=4.0V

0.9

μS

Turn-on Rise Time

tr

2.6

μS

Turn-off Delay Time

td(off)

5.7

μS

Turn-off Fall Time

tf

3.9

μS

VDD=10V

IS=5A

RL=2.0Ω

S2

G2

Vin

D2

D1

G1

4.0V

S1

90 %

10 %

90 %

90 %

10 %

10 %

Notes: 1.Mounted on FR4 board (25.4mm25.4mmt1.0mm) using the minimum recommended pad size (36um Copper ).

2.t = 10 ms , Duty Cycle = 1 %.

3.When FET1 is measured,G2 and S2 are short-circuited.

③

③

③

8.0

Qg

Total Gate Charge

VSS=10V,IS=8A,VGS=6.0V

nC

VF(S-S)

Diode Forward Voltage

VGS=0V,IS=1A

1.0

V

34.7

0.85

Qg1s1

Gate1-source1 charge

nC

5.9

Qg1s2

Gate1-source2 charge

nC

11.8

③

③

③

VGS=2.5V,IS=3A

4.0

6.6

mΩ

9.2

③

VSS=0V,VGS= ±5V

±1.0

F6617SPK

Dual N-Channel MOSFET