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BC2003DW Datasheet(PDF) 1 Page - Goodwork Semiconductor Co., Ltd . |
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BC2003DW Datasheet(HTML) 1 Page - Goodwork Semiconductor Co., Ltd . |
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1 / 6 page  Absolute Maximum Ratings (TAmbient=25ºC unless noted otherwise) Symbol Description Limit Unit VDS Drain-Source Voltage 20 -20 Volt VGS Gate-Source Voltage ±12 Volt ID Drain Current-Continuous 3 -3 Amp IDM Drain Current-Pulsed (Note 1) 12 -12 Amp PD Maximum Power Dissipation 1.4 Watt TJ Operating Temperature Range -55 to +150 ℃ TSTG Storage Temperature Range -55 to +150 ℃ Thermal Characteristic Symbol Description Limit Unit RθJA Thermal Resistance, Junction to Ambient 90 ℃/W Features N Channel V DS=20V, ID=3A R DS(ON)=26mΩ@VGS=4.5V R DS(ON) =32mΩ@VGS=2.5V P Channel V DS=-20V, ID=-3A R DS(ON)=67mΩ@VGS=-4.5V R DS(ON)=90mΩ@VGS=-2.5V S1 G1 G2 S2 N-Ch P-ch Schematic diagram Main Applications Battery Protection Load Switch Power Management SOT-23-6L Top View B N/P Channel Enhancement MOSFET C2003DW |
Similar Part No. - BC2003DW |
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Similar Description - BC2003DW |
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