Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

N- Channel MOSFET

Drain-source breakdown voltage

V (BR)DSS

VGS =0V, ID=250µA

60

V

Zero gate voltage drain current

IDSS

VDS =48V,VGS = 0V

1

µA

VGS =±20V, VDS = 0V

±10

µA

VGS =±10V, VDS = 0V

±200

nA

Gate-body leakage current

IGSS

VGS =±5V, VDS = 0V

±100

nA

Gate threshold voltage (note 3)

VGS(th)

VDS =VGS, ID =1mA

1

1.3

2.5

V

VGS =4.5V, ID =0.2A

1.1

5.3

Ω

Drain-source on-resistance (note 3)

RDS(on)

VGS =10V, ID =0.5A

0.9

5

Ω

Diode forward voltage

VSD

IS=0.3A, VGS = 0V

1.5

V

DYNAMIC PARAMETERS (note 4)

Input Capacitance

Ciss

40

pF

Output Capacitance

Coss

30

pF

Reverse Transfer Capacitance

Crss

VDS =10V,VGS =0V,f =1MHz

10

pF

SWITCHING PARAMETERS (note 4)

Turn-on delay time

td(on)

10

ns

Turn-off delay time

td(off)

VGS=10V,VDD=50V,

RL=250

Ω,RGEN=50Ω,

15

ns

Reverse recovery time

trr

30

ns

Recovered charge

Qr

IS=300mA;

dIS/dt=-100A/s;VGS=0V;

VR=25V

30

nC

P- Channel MOSFET

Drain-source breakdown voltage

V (BR)DSS

VGS = 0V, ID =-250µA

-50

V

VDS =-50V,VGS = 0V

-15

µA

Zero gate voltage drain current

IDSS

VDS =-25V,VGS = 0V

-0.1

µA

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

±10

µA

Gate threshold voltage (note 3)

VGS(th)

VDS =VGS, ID =-250µA

-0.9

-1.62

-2

V

MOSFET ELECTRICAL CHARACTERISTICS a

T =25

℃ unless otherwise specified

VGS =-5V, ID =-0.1A

5.5

10

Ω

Drain-source on-resistance (note 3)

RDS(on)

VGS =-10V, ID =-0.1A

4.1

8

Ω

Forward transconductance (note 3)

gFS

VDS =-25V, ID =-0.1A

0.05

S

DYNAMIC CHARACTERISTICS (note 4)

Input capacitance

Ciss

30

pF

Output capacitance

Coss

10

pF

Reverse transfer capacitance

Crss

VDS =-5V,VGS =0V,f =1MHz

5

pF

SWITCHING CHARACTERISTICS (note 4)

Turn-on delay time

td(on)

2.5

ns

Turn-on rise time

tr

1

ns

Turn-off delay time

td(off)

16

ns

Turn-off fall time

tf

VDD=-15V,

RL=50

Ω, ID =-2.5A

8

ns

SOURCE−DRAIN DIODE CHARACTERISTICS(note 4)

Continuous Current

IS

-0.18

A

Pulsed Current

ISM

-0.7

A

Diode forward voltage (note 3)

VDS

IS=-0.13A, VGS = 0V

-2.2

V

Note: 1、 Surface mounted on FR-4 board using minimum pad size, 1oz copper

2、 Repetitive Rating: Pulse width limited by maximum junction temperature.

3、 Pulse test: pulse width ≤ 300μ s, duty cycle ≤2%

4、 These parameters have no way to verify.

B

N-Channel + P-Channel Power MOSFET

C7252DW