Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

20

V

Gate-source leakage

IGSS

VDS =0V, VGS =±4.5V

±1

µA

Zero gate voltage drain current

IDSS

VDS =16V, VGS =0V

100

nA

ON CHARACTERISTICS (note 2)

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID =250µA

0.45

0.8

1.1

V

VGS =4.5V, ID =600mA

300

570

VGS =2.5V, ID =500mA

380

620

VGS =1.8V, ID =350mA

550

700

Drain-source on-state resistance

RDS(on)

VGS =1.5V, ID =40mA

600

1500

m

Ω

Forward transconductance

gfs

VDS =10V, ID =400mA

0.5

S

CHARGES AND CAPACITANCES (note 3)

Input Capacitance

Ciss

110

Output Capacitance

Coss

16

Reverse Transfer Capacitance

Crss

VDS =16V,VGS =0V,f =1MHz

12

pF

Total Gate Charge

Qg

1.82

Gate-Source Charge

Qgs

0.3

Gate-Drain Charge

Qgd

VDS =10V,VGS =4.5V,

ID =200mA

0.42

nC

SWITCHING CHARACTERISTICS (note 3,4)

Turn-on delay time

td(on)

3.7

Rise time

tr

4.4

Turn-off delay time

td(off)

25

Fall time

tf

VDD=10V, VGS=4.5V

RG=10Ω, ID =200mA

7.6

ns

DRAIN-SOURCE DIODE CHARACTERISTICS

Body diode voltage

VSD

IS=0.2A, VGS =0V

1.1

V

Notes : 1. Surface mounted on FR4 board using 1 in sq pad size

.

2. Pulse Test : Pulse width

≤300µs, Duty cycle ≤2%.

3. Guaranteed by design, not subject to production testing.

4. Switching characteristics are independent of operating junction temperatures.

MOSFET ELECTRICAL CHARACTERISTICS

a

T =25

℃ unless otherwise specified

N-Channel 20-V(D-S) MOSFET

B C4153KT