Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

60

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=60V, VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

1.2

1.7

2.5

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=15A

7.0

9.5

mΩ

VGS=4.5V, ID=12A

9.0

12

mΩ

Dynamic Characteristics

Ciss

Input Capacitance

VDD=30V, VGS=0V ,

F=1MHz

1090

pF

Coss

Output Capacitance

309

pF

Crss

Reverse Transfer Capacitance

8.5

pF

Switching Characteristics

td(on)

Turn-on Delay Time

VDD=30V, VGS=10V

RG=3Ω, ID=12A

4.8

nS

tr

Turn-on Rise Time

7.6

nS

td(off)

Turn-Off Delay Time

24

nS

tf

Turn-Off Fall Time

8.9

nS

Qg

Total Gate Charge

VGS=10V, VDS=30V,

ID=15A

16.5

nC

Qgs

Gate-Source Charge

2.6

nC

Qgd

Gate-Drain Charge

2.7

nC

Drain-Source Diode Characteristics

VSD

Diode Forward Voltage

VGS=0V, IS=10A

0.72

1.4

V

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Surface mounted on FR4 Board, t≤10 sec

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

4. Guaranteed by design, not subject to production

     

FN0608D5