Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

2.0

3.0

4.0

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=20A

5.0

6.5

mΩ

Dynamic Characteristics

Ciss

Input Capacitance

VDD=50V, VGS=0V ,

F=1MHz

2350

pF

Coss

Output Capacitance

540

pF

Crss

Reverse Transfer Capacitance

12

pF

Switching Characteristics

td(on)

Turn-on Delay Time

VDD=50V, VGS=10V

RG=6Ω, ID=1A

13

nS

tr

Turn-on Rise Time

29

nS

td(off)

Turn-Off Delay Time

40

nS

tf

Turn-Off Fall Time

44

nS

Qg

Total Gate Charge

VGS=10V, VDS=80V,

ID=10A

38

nC

Qgs

Gate-Source Charge

8.0

nC

Qgd

Gate-Drain Charge

9.0

nC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Surface mounted on FR4 Board, t≤10 sec

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

4. Guaranteed by design, not subject to production

  

FN1006P

N-Channel Enhancement MOSFET