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PEMD48 Datasheet(PDF) 6 Page - NXP Semiconductors |
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PEMD48 Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 2001 Nov 07 6 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1, R2 = 47 k Ω, 47 kΩ and 2.2 kΩ, 47 kΩ PEMD48 handbook, halfpage 103 102 10 1 MHC011 −10−1 −1 (3) −10 IC (mA) hFE −102 (1) (2) Fig.7 DC current gain as a function of collector current; typical values. TR2 (PNP); VCE = −5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage −10 −102 −103 MHC010 −10−1 −102 −1 −10 (2) (3) IC (mA) VCEsat (mV) (1) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage −102 −103 −104 MHC013 −10−2 −10−1 −1 IC (mA) Vi(off) (mV) −10 (3) (2) (1) Fig.9 Input-off voltage as a function of collector current; typical values. TR2 (PNP); VCE = −5V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. handbook, halfpage −102 −103 −104 MHC012 −10−1 −102 −1 −10 IC (mA) Vi(on) (mV) (2) (3) (1) Fig.10 Input-on voltage as a function of collector current; typical values. TR2 (PNP); VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb =25 °C. (3) Tamb = 100 °C. |
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