PEMD6 datasheet(5/8 Pages) PHILIPS

5 / 8 page

2001 Nov 07

Philips Semiconductors

Product speciﬁcation

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PEMD6

handbook, halfpage

103

102

MHC024

10−1

110

102

hFE

IC (mA)

(1)

(3)

(2)

Fig.3

DC current gain as a function of collector

current; typical values.

TR1 (NPN); VCE =5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

102

103

MHC025

10−1

110

VCEsat

(mV)

IC (mA)

102

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

TR1 (NPN); IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

MHC026

−10−1

−1

−10

hFE

IC (mA)

−102

(1)

(2)

(3)

Fig.5

DC current gain as a function of collector

current; typical values.

TR2 (PNP); VCE = −5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

−10

−102

−103

MHC027

−10−1

−1

−10

VCEsat

(mV)

IC (mA)

−102

(1)

(2)

(3)

Fig.6

Collector-emitter saturation voltage as a

function of collector current; typical values.

TR2 (PNP); IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

PEMD6 Datasheet(PDF) 5 Page - NXP Semiconductors

PEMD6 Datasheet(HTML) 5 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL