PEMH7 datasheet(4/8 Pages) PHILIPS

4 / 8 page

2001 Oct 22

Philips Semiconductors

Preliminary speciﬁcation

NPN resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PEMH7

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB =50V; IE =0

−−

100

ICEO

collector-emitter cut-off current

VCE =50V; IB =0

−−

µA

VCE =30V; IB = 0; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

100

hFE

DC current gain

VCE =5V; IC = 1 mA

200

330

−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−−

100

input resistor

3.3

4.7

6.1

Ω

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

2.5

handbook, halfpage

103

102

MHC074

10−1

(1)

(3)

hFE

IC (mA)

102

(2)

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

102

103

MHC075

10−1

110

VCEsat

(mV)

IC (mA)

102

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

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